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bs series silicon epitaxial planar zener diodes absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t stg - 65 to + 175 o c 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) 2v0bs 1.88 2.2 5 100 5 120 0.5 2v0bsa 1.88 2.1 5 100 5 120 0.5 2v0bsb 2.02 2.2 5 100 5 120 0.5 2v2bs 2.12 2.41 5 100 5 120 0.7 2v2bsa 2.12 2.3 5 100 5 120 0.7 2v2bsb 2.22 2.41 5 100 5 120 0.7 2v4bs 2.33 2.63 5 100 5 120 1 2v4bsa 2.33 2.52 5 100 5 120 1 2v4bsb 2.43 2.63 5 100 5 120 1 2v7bs 2.54 2.91 5 110 5 100 1 2v7bsa 2.54 2.75 5 110 5 100 1 2v7bsb 2.69 2.91 5 110 5 100 1 max. 2.9 max. 1.9 glass case do-34 max. 0.45 min. 27.5 min. 27.5 xxx cathode band part no. dimensions in mm black black 1 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) 3v0bs 2.85 3.22 5 120 5 50 1 3v0bsa 2.85 3.07 5 120 5 50 1 3v0bsb 3.01 3.22 5 120 5 50 1 3v3bs 3.16 3.53 5 120 5 20 1 3v3bsa 3.16 3.38 5 120 5 20 1 3v3bsb 3.32 3.53 5 120 5 20 1 3v6bs 3.47 3.83 5 120 5 10 1 3v6bsa 3.47 3.68 5 120 5 10 1 3v6bsb 3.62 3.83 5 120 5 10 1 3v9bs 3.77 4.14 5 120 5 5 1 3v9bsa 3.77 3.98 5 120 5 5 1 3v9bsb 3.92 4.14 5 120 5 5 1 4v3bs 4.05 4.53 5 120 5 5 1 4v3bsa 4.05 4.26 5 120 5 5 1 4v3bsb 4.2 4.4 5 120 5 5 1 4v3bsc 4.34 4.53 5 120 5 5 1 4v7bs 4.47 4.91 5 100 5 5 1 4v7bsa 4.47 4.65 5 100 5 5 1 4v7bsb 4.59 4.77 5 100 5 5 1 4v7bsc 4.71 4.91 5 100 5 5 1 5v1bs 4.85 5.35 5 70 5 5 1.5 5v1bsa 4.85 5.03 5 70 5 5 1.5 5v1bsb 4.97 5.18 5 70 5 5 1.5 5v1bsc 5.12 5.35 5 70 5 5 1.5 5v6bs 5.29 5.88 5 40 5 5 2.5 5v6bsa 5.29 5.52 5 40 5 5 2.5 5v6bsb 5.46 5.7 5 40 5 5 2.5 5v6bsc 5.64 5.88 5 40 5 5 2.5 6v2bs 5.81 6.4 5 30 5 5 3 6v2bsa 5.81 6.06 5 30 5 5 3 6v2bsb 5.99 6.24 5 30 5 5 3 6v2bsc 6.16 6.4 5 30 5 5 3 6v8bs 6.32 6.97 5 25 5 2 3.5 6v8bsa 6.32 6.59 5 25 5 2 3.5 6v8bsb 6.52 6.79 5 25 5 2 3.5 6v8bsc 6.70 6.97 5 25 5 2 3.5 7v5bs 6.88 7.64 5 25 5 0.5 4 7v5bsa 6.88 7.19 5 25 5 0.5 4 7v5bsb 7.11 7.41 5 25 5 0.5 4 7v5bsc 7.33 7.64 5 25 5 0.5 4 bs series silicon epitaxial planar zener diodes 2 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) 8v2bs 7.56 8.41 5 20 5 0.5 5 8v2bsa 7.56 7.9 5 20 5 0.5 5 8v2bsb 7.82 8.15 5 20 5 0.5 5 8v2bsc 8.07 8.41 5 20 5 0.5 5 9v1bs 8.33 9.29 5 20 5 0.5 6 9v1bsa 8.33 8.7 5 20 5 0.5 6 9v1bsb 8.61 8.99 5 20 5 0.5 6 9v1bsc 8.89 9.29 5 20 5 0.5 6 10bs 9.19 10.3 5 20 5 0.2 7 10bsa 9.19 9.59 5 20 5 0.2 7 10bsb 9.48 9.9 5 20 5 0.2 7 10bsc 9.82 10.3 5 20 5 0.2 7 11bs 10.18 11.26 5 20 5 0.2 8 11bsa 10.18 10.63 5 20 5 0.2 8 11bsb 10.5 10.95 5 20 5 0.2 8 11bsc 10.82 11.26 5 20 5 0.2 8 12bs 11.13 12.3 5 25 5 0.2 9 12bsa 11.13 11.63 5 25 5 0.2 9 12bsb 11.5 11.92 5 25 5 0.2 9 12bsc 11.8 12.3 5 25 5 0.2 9 13bs 12.18 13.62 5 25 5 0.2 10 13bsa 12.18 12.71 5 25 5 0.2 10 13bsb 12.59 13.16 5 25 5 0.2 10 13bsc 13.03 13.62 5 25 5 0.2 10 15bs 13.48 15.02 5 25 5 0.2 11 15bsa 13.48 14.09 5 25 5 0.2 11 15bsb 13.95 14.56 5 25 5 0.2 11 15bsc 14.42 15.02 5 25 5 0.2 11 16BS 14.87 16.5 5 25 5 0.2 12 16BSa 14.87 15.5 5 25 5 0.2 12 16BSb 15.33 15.96 5 25 5 0.2 12 16BSc 15.79 16.5 5 25 5 0.2 12 18bs 16.34 18.3 5 30 5 0.2 13 18bsa 16.34 17.06 5 30 5 0.2 13 18bsb 16.9 17.67 5 30 5 0.2 13 18bsc 17.51 18.3 5 30 5 0.2 13 20bs 18.14 20.45 5 30 5 0.2 15 20bsa 18.14 18.96 5 30 5 0.2 15 20bsb 18.8 19.68 5 30 5 0.2 15 20bsc 19.52 20.45 5 30 5 0.2 15 bs series silicon epitaxial planar zener diodes 3 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) 22bs 20.23 22.61 5 30 5 0.2 17 22bsa 20.23 21.08 5 30 5 0.2 17 22bsb 20.76 21.65 5 30 5 0.2 17 22bsc 21.22 22.09 5 30 5 0.2 17 22bsd 21.68 22.61 5 30 5 0.2 17 24bs 22.26 24.81 5 35 5 0.2 19 24bsa 22.26 23.12 5 35 5 0.2 19 24bsb 22.75 23.73 5 35 5 0.2 19 24bsc 23.29 24.27 5 35 5 0.2 19 24bsd 23.81 24.81 5 35 5 0.2 19 27bs 24.26 27.64 5 45 5 0.2 21 27bsa 24.26 25.52 5 45 5 0.2 21 27bsb 24.97 26.26 5 45 5 0.2 21 27bsc 25.63 26.95 5 45 5 0.2 21 27bsd 26.29 27.64 5 45 5 0.2 21 30bs 26.99 30.51 5 55 5 0.2 23 30bsa 26.99 28.39 5 55 5 0.2 23 30bsb 27.7 29.13 5 55 5 0.2 23 30bsc 28.36 29.82 5 55 5 0.2 23 30bsd 29.02 30.51 5 55 5 0.2 23 33bs 29.68 33.11 5 65 5 0.2 25 33bsa 29.68 31.22 5 65 5 0.2 25 33bsb 30.32 31.88 5 65 5 0.2 25 33bsc 30.9 32.5 5 65 5 0.2 25 33bsd 31.49 33.11 5 65 5 0.2 25 36bs 32.14 35.77 5 75 5 0.2 27 36bsa 32.14 33.79 5 75 5 0.2 27 36bsb 32.79 34.49 5 75 5 0.2 27 36bsc 33.4 35.13 5 75 5 0.2 27 36bsd 34.01 35.77 5 75 5 0.2 27 39bs 34.68 38.52 5 85 5 0.2 30 39bsa 34.68 36.47 5 85 5 0.2 30 39bsb 35.36 37.19 5 85 5 0.2 30 39bsc 36 37.85 5 85 5 0.2 30 39bsd 36.63 38.52 5 85 5 0.2 30 1) tested with pulse tp = 20 ms. bs series silicon epitaxial planar zener diodes 4 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
t j = 25 o c bs series silicon epitaxial planar zener diodes 5 of 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech

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